An ultralow power athermal silicon modulator.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 24915772.
- Also identified by DOI 10.1038/ncomms5008 and PMC identifier 4082639.
- Licence recorded as CC BY-NC-SA.
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Abstract
Silicon photonics has emerged as the leading candidate for implementing ultralow power wavelength-division-multiplexed communication networks in high-performance computers, yet current components (lasers, modulators, filters and detectors) consume too much power for the high-speed femtojoule-class links that ultimately will be required. Here we demonstrate and characterize the first modulator to achieve simultaneous high-speed (25 Gb s(-1)), low-voltage (0.5 VPP) and efficient 0.9 fJ per bit error-free operation. This low-energy high-speed operation is enabled by a record electro-optic response, obtained in a vertical p-n junction device that at 250 pm V(-1) (30 GHz V(-1)) is up to 10 times larger than prior demonstrations. In addition, this record electro-optic response is used to compensate for thermal drift over a 7.5 °C temperature range with little additional energy consumption (0.24 fJ per bit for a total energy consumption below 1.03 J per bit). The combined results of highly efficient modulation and electro-optic thermal compensation represent a new paradigm in modulator development and a major step towards single-digit femtojoule-class communications.