Doping dependence of the Raman spectrum of defected graphene.
basic_science · Level V
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- Record sourced from PubMed, PMID 24960180.
- Also identified by DOI 10.1021/nn502676g.
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Abstract
We investigate the evolution of the Raman spectrum of defected graphene as a function of doping. Polymer electrolyte gating allows us to move the Fermi level up to 0.7 eV, as directly monitored by in situ Hall-effect measurements. For a given number of defects, we find that the intensities of the D and D' peaks decrease with increasing doping. We assign this to an increased total scattering rate of the photoexcited electrons and holes, due to the doping-dependent strength of electron-electron scattering. We present a general relation between D peak intensity and defects valid for any doping level.