Direct observation of doping sites in temperature-controlled, p-doped P3HT thin films by conducting atomic force microscopy.
basic_science · Level V
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- Record sourced from PubMed, PMID 25060970.
- Also identified by DOI 10.1002/adma.201402015.
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Abstract
The distribution of dopant sites in doped poly(3-hexylthiophene) (P3HT) thin films is characterized using optical absorption, grazing-incidence X-ray diffraction, and conducting atomic force microscopy (c-AFM). It is shown that dopant sites can be directly observed using c-AFM and that the solution temperature dramatically impacts phase separation and conductivity in spin-cast films.