Novel electroforming-free nanoscaffold memristor with very high uniformity, tunability, and density.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 25070261.
- Also identified by DOI 10.1002/adma.201401917 and PMC identifier 4225682.
- Licence recorded as CC BY-NC-ND.
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Abstract
A novel device structure is developed, which uses easy-to-grow nano scaffold films to localize oxygen vacancies at vertical heterointerfaces. The strategy is to design vertical interfaces using two structurally incompatible oxides, which are likely to generate a high-concentration oxygen vacancy. Non-linear electroresistance at room temperature is demonstrated using these nano scaffold devices. The resistance variations exceed two orders of magnitude with very high uniformity and tunability.