Interface engineering for high-performance top-gated MoS2 field-effect transistors.
basic_science · Level V
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- Record sourced from PubMed, PMID 25070646.
- Also identified by DOI 10.1002/adma.201402008.
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Abstract
Experimental evidence of the optimized interface engineering effects in MoS2 transistors is demonstrated. The MoS2/Y2O3/HfO2 stack offers excellent interface control. Results show that HfO2 layer can be scaled down to 9 nm, yet achieving a near-ideal sub-threshold slope (65 mv/dec) and the highest saturation current (526 μA/μm) of any MoS2 transistor reported to date.