Direct laser writing of air-stable p-n junctions in graphene.
basic_science · Level V
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- Record sourced from PubMed, PMID 25075554.
- Also identified by DOI 10.1021/nn503574p.
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Abstract
Photo-oxidation of spin-cast films of 6,13-bis(triisopropylsilylethynyl) pentacene has been exploited to develop a novel means of spatially modulating doping in graphene. The degree of n-doping of initially p-type graphene can be varied by laser irradiation time or intensity with carrier density change up to ∼7 × 10(12) cm(-2). This n-doping approach is demonstrated as an effective means of creating p-n junctions in graphene. The ability to direct-write arbitrary shapes and patterns of n-doped regions in graphene simply by scanning a laser source should facilitate the exploitation of p-n junctions for a variety of electronic and optoelectronic device applications.