Enhancement of ferroelectric Curie temperature in BaTiO3 films via strain-induced defect dipole alignment.
basic_science · Level V
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- Record sourced from PubMed, PMID 25099557.
- Also identified by DOI 10.1002/adma.201400254.
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Abstract
The combination of epitaxial strain and defect engineering facilitates the tuning of the transition temperature of BaTiO3 to >800 °C. Advances in thin-film deposition enable the utilization of both the electric and elastic dipoles of defects to extend the epitaxial strain to new levels, inducing unprecedented functionality and temperature stability in ferroelectrics.