Selective-area epitaxy of pure wurtzite InP nanowires: high quantum efficiency and room-temperature lasing.
basic_science · Level V
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- Record sourced from PubMed, PMID 25115241.
- Also identified by DOI 10.1021/nl5021409.
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Abstract
We report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with diameters ranging from 80 to 600 nm using selective-area metal-organic vapor-phase epitaxy and experimentally determine a quantum efficiency of ∼50%, which is on par with InP epilayers. We also demonstrate room-temperature, photonic mode lasing from these nanowires. Their excellent structural and optical quality opens up new possibilities for both fundamental quantum optics and optoelectronic devices.