Probing the internal electric field in GaN/AlGaN nanowire heterostructures.
basic_science · Level V
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- Record sourced from PubMed, PMID 25115566.
- Also identified by DOI 10.1021/nl501845m.
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Abstract
We demonstrate the direct analysis of polarization-induced internal electric fields in single GaN/Al0.3Ga0.7N nanodiscs embedded in GaN/AlN nanowire heterostructures. Superposition of an external electric field with different polarity results in compensation or enhancement of the quantum-confined Stark effect in the nanodiscs. By field-dependent analysis of the low temperature photoluminescence energy and intensity, we prove the [0001̅]-polarity of the nanowires and determine the internal electric field strength to 1.5 MV/cm.