High efficiency Cu2ZnSn(S,Se)4 solar cells by applying a double In2S3/CdS emitter.
basic_science · Level V
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- Record sourced from PubMed, PMID 25155874.
- Also identified by DOI 10.1002/adma.201402373.
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Abstract
High-efficiency Cu2ZnSn(S,Se)4 solar cells are reported by applying In2S3/CdS double emitters. This new structure offers a high doping concentration within the Cu2ZnSn(S,Se)4 solar cells, resulting in a substantial enhancement in open-circuit voltage. The 12.4% device is obtained with a record open-circuit voltage deficit of 593 mV.