An epitaxial ferroelectric tunnel junction on silicon.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 25200550.
- Also identified by DOI 10.1002/adma.201402527.
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Abstract
Epitaxially grown functional perovskites on silicon (001) and the ferroelectricity of a 3.2 nm thick BaTiO3 barrier layer are demonstrated. The polarization-switching-induced change in tunneling resistance is measured to be two orders of magnitude. The obtained results suggest the possibility of integrating ferroelectric tunnel junctions as binary data storage media in non-volatile memory cells on a silicon platform.
Medical subject headings
- Barium Compounds
- Calcium Compounds
- Oxides
- Silicon
- Titanium