Charge-trap flash-memory oxide transistors enabled by copper-zirconia composites.
basic_science · Level V
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- Record sourced from PubMed, PMID 25205206.
- Also identified by DOI 10.1002/adma.201401354.
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Abstract
A solution-processed electrochemical charge-trap flash memory element is based on a solid solution of copper and zirconium oxides (Cu-ZrO2) as a charge-trapping layer. Because of the facile reduction of Cu(2+) to Cu(1+), Cu-ZrO2 thin films are especially effective in memory devices based on thin-film transistors when the devices are fabricated from combustion-processed metal-oxide semiconductors (In2O3 and an indium-gallium oxide).