Observations of a metal-insulator transition and strong surface states in Bi2-x SbxSe3 thin films.
basic_science · Level V
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- Record sourced from PubMed, PMID 25205459.
- Also identified by DOI 10.1002/adma.201402299.
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Abstract
High-quality thin films of the topological insulator Bi2-xSbxSe3 are grown by molecular beam epitaxy. A metal-insulator transition along with strong surface states - revealed by Shubnikov-de Haas oscillations - is observed as the Sb concentration is increased. This system represents a widely tunable platform for achieving high surface conduction, suppressing the bulk influence, and manipulating the band structure of topological insulators.