Origin of high photoconductive gain in fully transparent heterojunction nanocrystalline oxide image sensors and interconnects.
basic_science · Level V
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- Record sourced from PubMed, PMID 25219518.
- Also identified by DOI 10.1002/adma.201401955.
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Abstract
A technique for invisible image capture using a photosensor array based on transparent conducting oxide semiconductor thin-film transistors and transparent interconnection technologies is presented. A transparent conducting layer is employed for the sensor electrodes as well as interconnection in the array, providing about 80% transmittance at visible-light wavelengths. The phototransistor is a Hf-In-Zn-O/In-Zn-O heterostructure yielding a high quantum-efficiency in the visible range.