Nanoscale carrier multiplication mapping in a Si diode.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 25244561.
- Also identified by DOI 10.1021/nl5022255.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Carrier multiplication (CM), the creation of electron-hole pairs from an excited electron, has been investigated in a silicon p-n junction by multiple probe scanning tunneling microscopy. The technique enables an unambiguous determination of the quantum yield based on the direct measurement of both electron and hole currents that are generated by hot tunneling electrons. The combined effect of impact ionization, carrier diffusion, and recombination is directly visualized from the spatial mapping of the CM efficiency. Atomically well-ordered areas of the p-n junction surface sustain the highest CM rate, demonstrating the key role of the surface in reaching high yield.