Spintronic functionality of BiFeO3 domain walls.

Lee, Ji Hye; Fina, Ignasi; Marti, Xavi; Kim, Young Heon; Hesse, Dietrich; Alexe, Marin · Adv Mater · 2014

basic_science · Level V

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Abstract

Anisotropic magnetoresistance at the BiFeO3 domain walls has been observed thanks to the realization of micro-devices that allow the direct magneto-transport characterization of the domain-walls. Anisotropic magnetoresistance of ferromagnetic metals has been a pillar in spintronic technology, and now it is evidenced at the conductive domain walls of an insulating ferroelectric material, which implies that domain walls become an electrically tunable nanospintronic object.