The origin of excellent gate-bias stress stability in organic field-effect transistors employing fluorinated-polymer gate dielectrics.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 25263950.
- Also identified by DOI 10.1002/adma.201402363.
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Abstract
Tuning of the energetic barriers to charge transfer at the semiconductor/dielectric interface in organic field-effect transistors (OFETs) is achieved by varying the dielectric functionality. Based on this, the correlation between the magnitude of the energy barrier and the gate-bias stress stability of the OFETs is demonstrated, and the origin of the excellent device stability of OFETs employing fluorinated dielectrics is revealed.
Medical subject headings
- Polymers
- Semiconductors
- Transistors, Electronic