Selective remanent ambipolar charge transport in polymeric field-effect transistors for high-performance logic circuits fabricated in ambient.
basic_science · Level V
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- Record sourced from PubMed, PMID 25284119.
- Also identified by DOI 10.1002/adma.201403070.
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Abstract
Ambipolar polymeric field-effect transistors can be programmed into a p- or n-type mode by using the remanent polarization of a ferroelectric gate insulator. Due to the remanent polarity, the device architecture is suited as a building block in complementary logic circuits and in CMOS-compatible memory cells for non-destructive read-out operations.