Nanosecond spin lifetimes in single- and few-layer graphene-hBN heterostructures at room temperature.
basic_science · Level V
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- Record sourced from PubMed, PMID 25291305.
- Also identified by DOI 10.1021/nl501278c.
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Abstract
We present a new fabrication method of graphene spin-valve devices that yields enhanced spin and charge transport properties by improving both the electrode-to-graphene and graphene-to-substrate interface. First, we prepare Co/MgO spin injection electrodes onto Si(++)/SiO2. Thereafter, we mechanically transfer a graphene-hBN heterostructure onto the prepatterned electrodes. We show that room temperature spin transport in single-, bi-, and trilayer graphene devices exhibit nanosecond spin lifetimes with spin diffusion lengths reaching 10 μm combined with carrier mobilities exceeding 20,000 cm(2)/(V s).