Mapping charge-carrier density across the p-n junction in ambipolar carbon-nanotube networks by Raman microscopy.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 25338783.
- Also identified by DOI 10.1002/adma.201403655.
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Abstract
In situ confocal Raman microscopy is used to map the recombination zone (induced p-n junction) in an ambipolar carbon-nanotube-network transistor with high spatial resolution. The shift of the 2D mode (G' mode) depending on hole and electron accumulation serves as a measure for the local charge-carrier density and provides complementary information about charge transport and recombination in ambipolar transistors.