Sign control of magnetoresistance through chemically engineered interfaces.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 25339373.
- Also identified by DOI 10.1002/adma.201401283.
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Abstract
Chemically engineered interfaces are shown to produce inversions of the magnetoresistance in spintronic devices including lithium fluoride interlayers. This behavior is explained by the formation of anti-ferromagnetic difluoride layers. By changing the order of deposition of the different materials, the sign of the magnetoresistance can be deterministically controlled both in organic spin valves and in inorganic magnetic tunnel junctions.