Anomalous and highly efficient InAs nanowire phototransistors based on majority carrier transport at room temperature.
basic_science · Level V
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- Record sourced from PubMed, PMID 25352322.
- Also identified by DOI 10.1002/adma.201403664.
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Abstract
Core/shell-like n-type InAs nanowire phototransistors based on majority-carrier-dominated photodetection are investigated. Under optical illumination, electrons generated from the core are excited into the self-assembled near-surface photogating layer, forming a built-in electric field to significantly regulate the core conductance. Anomalous high photoconductive gain and fast response time are obtained at room temperature.