Origin of leakage paths driven by electric fields in Al-doped TiO2 films.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 25366700.
- Also identified by DOI 10.1002/adma.201403647.
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Abstract
The growth of leakage current paths in Al-doped TiO2 (ATO) films is observed by in situ TEM under negative bias stress. Through systematic HAADF-STEM, STEM-EDS, and STEM-EELS studies, it is confirmed that the electric field-induced growth of the Ru-doped TiO2 phase is the main reason for the ATO film's negative leakage.
Medical subject headings
- Aluminum
- Titanium