Structurally engineered stackable and scalable 3D titanium-oxide switching devices for high-density nanoscale memory.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 25377127.
- Also identified by DOI 10.1002/adma.201403675.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
A 3D high-density switching device is realized utilizing titanium oxide, which is the most optimum material, but which is not practically demonstrated yet. The 1S1R (one ReRAM with the developed switching device) exhibits memory characteristics with a significantly suppressed sneak current, which can be used to realize high-density ReRAM applications.