Optical control of internal electric fields in band gap-graded InGaN nanowires.
basic_science · Level V
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- Record sourced from PubMed, PMID 25487601.
- Also identified by DOI 10.1021/nl503616w.
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Abstract
InGaN nanowires are suitable building blocks for many future optoelectronic devices. We show that a linear grading of the indium content along the nanowire axis from GaN to InN introduces an internal electric field evoking a photocurrent. Consistent with quantitative band structure simulations we observe a sign change in the measured photocurrent as a function of photon flux. This negative differential photocurrent opens the path to a new type of nanowire-based photodetector. We demonstrate that the photocurrent response of the nanowires is as fast as 1.5 ps.