Segregation of In to dislocations in InGaN.
basic_science · Level V
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- Record sourced from PubMed, PMID 25594363.
- Also identified by DOI 10.1021/nl5036513.
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Abstract
Dislocations are one-dimensional topological defects that occur frequently in functional thin film materials and that are known to degrade the performance of InxGa1-xN-based optoelectronic devices. Here, we show that large local deviations in alloy composition and atomic structure are expected to occur in and around dislocation cores in InxGa(1-x)N alloy thin films. We present energy-dispersive X-ray spectroscopy data supporting this result. The methods presented here are also widely applicable for predicting composition fluctuations associated with strain fields in other inorganic functional material thin films.
Medical subject headings
- Gallium
- Indium
- Nitrogen