Tuning carrier mobilities and polarity of charge transport in films of CuInSe(x)S(2-x) quantum dots.
basic_science · Level V
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- Record sourced from PubMed, PMID 25613726.
- Also identified by DOI 10.1002/adma.201404878.
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Abstract
CuInSe(x)S(2-x) quantum dot field-effect transistors show p-type, n-type, and ambipolar behaviors with carrier mobilities up to 0.03 cm(2) V(-1) s(-1). Although some design rules from studies of cadmium and lead containing quantum dots can be applied, remarkable differences are observed including a strong gating effect in as-synthesized nanocyrstals with long ligands.