Generation of ensembles of individually resolvable nitrogen vacancies using nanometer-scale apertures in ultrahigh-aspect ratio planar implantation masks.
basic_science · Level V
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- Record sourced from PubMed, PMID 25621759.
- Also identified by DOI 10.1021/nl504441m.
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Abstract
A central challenge in developing magnetically coupled quantum registers in diamond is the fabrication of nitrogen vacancy (NV) centers with localization below ∼20 nm to enable fast dipolar interaction compared to the NV decoherence rate. Here, we demonstrate the targeted, high throughput formation of NV centers using masks with a thickness of 270 nm and feature sizes down to ∼1 nm. Super-resolution imaging resolves NVs with a full-width maximum distribution of 26 ± 7 nm and a distribution of NV-NV separations of 16 ± 5 nm.