Correlation of electrical and structural properties of single as-grown GaAs nanowires on Si (111) substrates.
basic_science · Level V
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- Record sourced from PubMed, PMID 25631459.
- Also identified by DOI 10.1021/nl5037879.
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Abstract
We present the results of the study of the correlation between the electrical and structural properties of individual GaAs nanowires measured in their as-grown geometry. The resistance and the effective charge carrier mobility were extracted for several nanowires, and subsequently, the same nano-objects were investigated using X-ray nanodiffraction. This revealed a number of perfectly stacked zincblende and twinned zincblende units separated by axial interfaces. Our results suggest a correlation between the electrical parameters and the number of intrinsic interfaces.