Strain and stability of ultrathin Ge layers in Si/Ge/Si axial heterojunction nanowires.
basic_science · Level V
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- Record sourced from PubMed, PMID 25654579.
- Also identified by DOI 10.1021/nl504241g.
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Abstract
The formation of abrupt Si/Ge heterointerfaces in nanowires presents useful possibilities for bandgap engineering. We grow Si nanowires containing thick Ge layers and sub-1 nm thick Ge "quantum wells" and measure the interfacial strain fields using geometric phase analysis. Narrow Ge layers show radial compressive strains of several percent, while stress at the Si/Ge interface causes lattice rotation. High strains can be achieved in these heterostructures, but we show that they are unstable to interdiffusion.