Giant photoamplification in indirect-bandgap multilayer MoS2 phototransistors with local bottom-gate structures.
basic_science · Level V
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- Record sourced from PubMed, PMID 25676825.
- Also identified by DOI 10.1002/adma.201404367.
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Abstract
Local-gate multilayer MoS2 phototransistors exhibit a photoresponsivity of up to 342.6 A W(-1) , which is higher by 3 orders of magnitude than that of global-gate multilayer MoS2 phototransistors. These simulations indicate that the gate underlap is critical for the enhancement of the photoresponsivity. These results suggest that high photoresponsivity can be achieved in indirect-bandgap multilayer MoS2 phototransistors by optimizing the optoelectronic design.