High mobility and low density of trap states in dual-solid-gated PbS nanocrystal field-effect transistors.
basic_science · Level V
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- Record sourced from PubMed, PMID 25688488.
- Also identified by DOI 10.1002/adma.201404495.
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Abstract
Dual-gated PbS nanocrystal field-effect transistors employing SiO2 and Cytop as gate dielectrics are fabricated. The obtained electron mobility (0.2 cm(2) V(-1) s(-1) ) and the high on/off ratio (10(5) -10(6) ), show that the controlled nanocrystal assembly (obtained with self-assembled monolayers), as well as the trap density reduction (using Cytop as dielectric), are crucial steps for the future application of nanocrystals.