Tunable quantum confinement in ultrathin, optically active semiconductor nanowires via reverse-reaction growth.
basic_science · Level V
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- Record sourced from PubMed, PMID 25728601.
- Also identified by DOI 10.1002/adma.201404900.
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Abstract
A unique growth scheme is demonstrated to realize ultrathin GaAs nanowires on Si with sizes down to the sub-10 nm regime. While this scheme preserves the bulk-like crystal properties, correlated optical experiments reveal huge blueshifted photo-luminescence (up to ≈100 meV) with decreasing nanowire cross-section, demonstrating very strong quantum confinement effects.