Arc-melting to narrow the bandgap of oxide semiconductors.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 25757453.
- Also identified by DOI 10.1002/adma.201405763.
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Abstract
The bandgap of a series of oxide semiconductors is narrowed by a quick and facile arc-melting method. A defective structure is formed in the fast melting and cooling process without changing its phase structure. Enhanced optical and electrical properties are found in the arc-melted oxide, such as enhanced photocatalytic properties of the arc-melted ZnO under visible light.