High-speed GaN/GaInN nanowire array light-emitting diode on silicon(111).
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 25758029.
- Also identified by DOI 10.1021/nl504447j.
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Abstract
The high speed on-off performance of GaN-based light-emitting diodes (LEDs) grown in c-plane direction is limited by long carrier lifetimes caused by spontaneous and piezoelectric polarization. This work demonstrates that this limitation can be overcome by m-planar core-shell InGaN/GaN nanowire LEDs grown on Si(111). Time-resolved electroluminescence studies exhibit 90-10% rise- and fall-times of about 220 ps under GHz electrical excitation. The data underline the potential of these devices for optical data communication in polymer fibers and free space.
Medical subject headings
- Gallium
- Indium
- Lighting
- Nanowires
- Semiconductors
- Silicon