TiS3 transistors with tailored morphology and electrical properties.
basic_science · Level V
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- Record sourced from PubMed, PMID 25771787.
- Also identified by DOI 10.1002/adma.201405632.
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Abstract
Control over the morphology of TiS3 is demonstrated by synthesizing 1D nanoribbons and 2D nanosheets. The nanosheets can be exfoliated down to a single layer. Through extensive characterization of the two morphologies, differences in the electronic properties are found and attributed to a higher density of sulphur vacancies in nanosheets, which, according to density functional theory calculations, leads to an n-type doping.