Graphene/Si-quantum-dot heterojunction diodes showing high photosensitivity compatible with quantum confinement effect.

Shin, Dong Hee; Kim, Sung; Kim, Jong Min; Jang, Chan Wook; Kim, Ju Hwan; Lee, Kyeong Won; Kim, Jungkil; Oh, Si Duck et al. · Adv Mater · 2015

basic_science · Level V

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Abstract

Graphene/Si quantum dot (QD) heterojunction diodes are reported for the first time. The photoresponse, very sensitive to variations in the size of the QDs as well as in the doping concentration of graphene and consistent with the quantum-confinement effect, is remarkably enhanced in the near-ultraviolet range compared to commercially available bulk-Si photodetectors. The photoresponse proves to be dominated by the carriertunneling mechanism.

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