Step-flow kinetics model for the vapor-solid-solid Si nanowires growth.

Abstract

Vapor-solid-solid (VSS) process has recently received continued attention as an alternative to grow Si nanowire. In comparison with common vapor-liquid-solid (VLS) growth with liquid catalyst, VSS growth can prevent the catalyst species from incorporating into nanowires with deep-level impurity, and achieve the compositionally abrupt interfaces by restraining the so-called "reservoir effect". However, despite the huge advances in experimental observations with in situ electron microscopy, VSS growth still remains much less understood in theory. Here, we developed a general mass-transport-limited kinetic model to describe the VSS growth process of Si nanowires by considering three surface diffusion processes and a slow interface diffusion process, where the former determines the atoms supplies way, while the latter dominates the growth of nanowires. The present model is not only well consistent with the available experimental data of Si nanowire, but also gives a clear physical image for the successive side-to-side ledge flow VSS growth.