Boosting the Open Circuit Voltage and Fill Factor of QDSSCs Using Hierarchically Assembled ITO@Cu2S Nanowire Array Counter Electrodes.
basic_science · Level V
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- Record sourced from PubMed, PMID 25929671.
- Also identified by DOI 10.1021/acs.nanolett.5b00096.
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Abstract
The key challenges in enhancing the power conversion efficiency (PCE) of a quantum dot-sensitized solar cell (QDSSC) are efficiently achieving charge separation at the photoanode and improving the charge transfer, which is limited by the interface between the electrolyte and the counter electrode (CE). Here, hierarchically assembled ITO@Cu2S nanowire arrays with conductive single-crystalline ITO cores and Cu2S nanocrystal shells were designed as efficient QDSSCs CEs. These arrays not only provided an efficient three-dimensional charge transport network but also allowed for the effective deposition of more Cu2S nanocrystals as active sites to catalyze the electrolyte reaction. This design considerably reduced the sheet and charge transfer resistance of the CE, thus decreasing the series resistance and increasing the shunt resistance of the QDSSC. As a result, QDSSCs with this CE exhibited an unprecedentedly high Voc of 0.688 V, a fill factor of 58.39%, and a PCE of 6.12%, which is 21.2% higher than that of the conventional brass/Cu2S CE.