Field-effect transistors based on amorphous black phosphorus ultrathin films by pulsed laser deposition.
basic_science · Level V
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- Record sourced from PubMed, PMID 25973767.
- Also identified by DOI 10.1002/adma.201500990.
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Abstract
Amorphous black phosphorus (a-BP) ultrathin films are deposited by pulsed laser deposition. a-BP field-effect trans-istors, exhibiting high carrier mobility and moderate on/off current ratio, are demonstrated. Thickness dependence of the bandgap, mobility, and on/off ratio are observed. These results offer not only a new nanoscale member in the BP family, but also a new opportunity to develop nano-electronic devices.