Pt/Ta2 O5 /HfO2- x /Ti resistive switching memory competing with multilevel NAND flash.

Yoon, Jung Ho; Kim, Kyung Min; Song, Seul Ji; Seok, Jun Yeong; Yoon, Kyung Jean; Kwon, Dae Eun; Park, Tae Hyung; Kwon, Young Jae et al. · Adv Mater · 2015

basic_science · Level V

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Record sourced from PubMed, PMID 25973913.
Also identified by DOI 10.1002/adma.201501167.
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Abstract

Pt/Ta2 O5 /HfO2- x /Ti resistive switching memory with a new circuit design is presented as a feasible candidate to succeed multilevel-cell (MLC) NAND flash memory. This device has the following characteristics: 3 bit MLC, electroforming-free, self-rectifying, much higher cell resistance than interconnection wire resistance, low voltage operation, low power consumption, long-term reliability, and only an electronic switching mechanism, without an ionic-motion-related mechanism.

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