Strain and Hole Gas Induced Raman Shifts in Ge-Si(x)Ge(1-x) Core-Shell Nanowires Using Tip-Enhanced Raman Spectroscopy.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 26053999.
- Also identified by DOI 10.1021/acs.nanolett.5b00176.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
We report tip-enhanced and conventional Raman spectroscopy studies of Ge-Si0.5Ge0.5 core-shell nanowires in which we observe two distinct Ge-Ge vibrational mode Raman peaks associated with vibrations in the Ge nanowire core and at the Ge-Si0.5Ge0.5 interface at which a quantum-confined hole gas is formed. Tip enhanced Raman measurements show dramatically increased sensitivity to the modes at the Ge-Si0.5Ge0.5 interface and a shift in position of this mode due to plasmonic field localization at the tip apex and the resulting change in phonon self-energy caused by increased coupling between phonons and intervalence-band carrier transitions.