Electron-Hole Confinement Symmetry in Silicon Quantum Dots.
basic_science · Level V
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- Record sourced from PubMed, PMID 26134900.
- Also identified by DOI 10.1021/acs.nanolett.5b01706.
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Abstract
We report electrical transport measurements on a gate-defined ambipolar quantum dot in intrinsic silicon. The ambipolarity allows its operation as either an electron or a hole quantum dot of which we change the dot occupancy by 20 charge carriers in each regime. Electron-hole confinement symmetry is evidenced by the extracted gate capacitances and charging energies. The results demonstrate that ambipolar quantum dots offer great potential for spin-based quantum information processing, since confined electrons and holes can be compared and manipulated in the same crystalline environment.