Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 26178685.
- Also identified by DOI 10.1002/adma.201501538.
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Abstract
Semipolar {101¯1} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber.
Medical subject headings
- Gallium
- Nanotechnology
- Nanotubes
- Silicon