Ionic Liquid Gating of Suspended MoS2 Field Effect Transistor Devices.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 26181777.
- Also identified by DOI 10.1021/acs.nanolett.5b01610.
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Abstract
We demonstrate ionic liquid (IL) gating of suspended few-layer MoS2 transistors, where ions can accumulate on both exposed surfaces. Upon application of IL, all free-standing samples consistently display more significant improvement in conductance than substrate-supported devices. The measured IL gate coupling efficiency is up to 4.6 × 10(13) cm(-2) V(-1). Electrical transport data reveal contact-dominated electrical transport properties and the Schottky emission as the underlying mechanism. By modulating IL gate voltage, the suspended MoS2 devices display metal-insulator transition. Our results demonstrate that more efficient charge induction can be achieved in suspended two-dimensional (2D) materials, which with further optimization, may enable extremely high charge density and novel phase transition.