Growth and Etching of Monolayer Hexagonal Boron Nitride.
basic_science · Level V
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- Record sourced from PubMed, PMID 26183904.
- Also identified by DOI 10.1002/adma.201501166.
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Abstract
The full spectrum from attachment-kinetic-dominated to diffusion-controlled modes is revealed for the cases of monolayer h-BN chemical vapor deposition (CVD) growth and Ar/H2 etching. The sets of grown and etched structures exhibit well-defined shape evolution from Euclidian to fractal geometry. The detailed abnormal processes for merging h-BN flakes into continuous structures or film are first observed and explained.