Lithography-Free Fabrication of Core-Shell GaAs Nanowire Tunnel Diodes.
basic_science · Level V
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- Record sourced from PubMed, PMID 26189994.
- Also identified by DOI 10.1021/acs.nanolett.5b01795.
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Abstract
GaAs core-shell p-n junction tunnel diodes were demonstrated by combining vapor-liquid-solid growth with gallium oxide deposition by atomic layer deposition for electrical isolation. The characterization of an ensemble of core-shell structures was enabled by the use of a tungsten probe in a scanning electron microscope without the need for lithographic processing. Radial tunneling transport was observed, exhibiting negative differential resistance behavior with peak-to-valley current ratios of up to 3.1. Peak current densities of up to 2.1 kA/cm(2) point the way to applications in core-shell photovoltaics and tunnel field effect transistors.