Switching Kinetic of VCM-Based Memristor: Evolution and Positioning of Nanofilament.
basic_science · Level V
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- Record sourced from PubMed, PMID 26193454.
- Also identified by DOI 10.1002/adma.201502758.
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Abstract
The filament in aAu/Ta2 O5 /Au system is analyzed and determined to be a nanoscaled TaO2-x filament. A shrunken anode localizes the filament formation and the defect boundary leads to faster accumulation of oxygen vacancies. The defect changes the switching domination between electron transport and oxygen-vacancy migration. The migration of oxygen vacancies limits the filament dynamics, indicating the crucial role played by oxygen defects.