Fabrication of Sub-25 nm Diameter GaSb Nanopillar Arrays by Nanoscale Self-Mask Effect.

Abstract

GaSb individual nanowires and nanowire arrays are considered as intriguing candidates for electronic and photonic applications. In this paper, we report a new mask-free method to fabricate large area GaSb nanopillar arrays through reactive ion etching of GaSb substrates facilitated by O2 plasma. We have shown that nanoscale oxide self-masks could form thereby facilitating the formation of GaSb nanopillars. We have achieved GaSb nanowires with diameters less than 25 nm and an aspect ratio of 24. Additionally, GaSb nanopillar arrays with desired heights, diameters, and density can be obtained by choosing the plasma chemistry and/or controlling etching parameters, such as bias power and pressure. The nanopillar arrays prepared also exhibit tunable broadband antireflection properties.