A Van Der Waals Homojunction: Ideal p-n Diode Behavior in MoSe2.
basic_science · Level V
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- Record sourced from PubMed, PMID 26293986.
- Also identified by DOI 10.1002/adma.201502278.
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Abstract
A MoSe2 p-n diode with a van der Waals homojunction is demonstrated by stacking undoped (n-type) and Nb-doped (p-type) semiconducting MoSe2 synthesized by chemical vapor transport for Nb substitutional doping. The p-n diode reveals an ideality factor of ≈1.0 and a high external quantum efficiency (≈52%), which increases in response to light intensity due to the negligible recombination rate at the clean homojunction interface.